| PART |
Description |
Maker |
| 2SA1011 2SA1011D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB
POWER TRANSISTORS(1.5A/160V/25W)
POWER TRANSISTORS(1.5A,160V,25W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SD2211 2SD1918 2SD1857A |
Power Transistor (160V , 1.5A)
|
ROHM[Rohm]
|
| 2SD1918TLQ |
Power Transistor (160V , 1.5A)
|
Rohm
|
| 2SD191809 |
Power Transistor (160V , 1.5A)
|
Rohm
|
| DXT5551P5-1011 DXT5551P5-15 |
160V NPN HIGH VOLTAGE TRANSISTOR
160V NPN HIGH VOLTAGE TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| M391T2953BG0-CD5/CC M378T2953BG0-CD5/CC M378T3354B |
TVS UNIDIRECT 1500W 16V SMC 无缓冲DDR2的内存模
TVS UNIDIRECT 1500W 160V SMC
TVS UNI-DIR 160V 1500W SMC
TVS BIDIRECT 1500W 160V SMC
DDR2 Unbuffered SDRAM MODULE
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EN3578A 2SC4614S-AN 2SC4614T-AN 2SA1770S-AN |
Bipolar Transistor (-)160V, (-)1.5A, Low VCE(sat), (PNP)NPN Single NMP
|
ON Semiconductor
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| 2SC2983Y 2SC2983O |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-251AA 晶体管|晶体管|叩| 160V五（巴西）总裁| 1.5AI（丙）|51AA
|
3M Company
|
| BUK98150-55 |
TrenchMOS transistor Logic level FET
Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 30x35 mm; Packaging: Bulk
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
